BAS216,135
vs
BAS21212
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Package Description |
R-CDSO-R2
|
R-PDSO-G3
|
Pin Count |
2
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Samacsys Manufacturer |
NXP
|
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.25 V
|
1.25 V
|
JESD-30 Code |
R-CDSO-R2
|
R-PDSO-G3
|
Non-rep Pk Forward Current-Max |
4 A
|
9 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Output Current-Max |
0.25 A
|
0.2 A
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Power Dissipation-Max |
0.4 W
|
0.25 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
85 V
|
250 V
|
Reverse Current-Max |
1 µA
|
0.1 µA
|
Reverse Recovery Time-Max |
0.004 µs
|
0.05 µs
|
Surface Mount |
YES
|
YES
|
Terminal Form |
WRAP AROUND
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
1
|
1
|
|
|
|
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-
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Compare BAS21212 with alternatives