BAS19LT1G vs BAS19-G feature comparison

BAS19LT1G onsemi

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BAS19-G Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description TO-236, 3 PIN R-PDSO-G3
Pin Count 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Factory Lead Time 52 Weeks, 4 Days
Samacsys Manufacturer onsemi
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2.5 A
Number of Elements 1 1
Number of Phases 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.225 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 120 V 100 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Base Number Matches 2 2
Rohs Code Yes

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