BAS16WE6433HTMA1 vs 1N4448WS feature comparison

BAS16WE6433HTMA1 Infineon Technologies AG

Buy Now Datasheet

1N4448WS Galaxy Microelectronics

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SC-70
Package Description R-PDSO-G3 SOD-323, 2 PIN
Pin Count 3
Manufacturer Package Code SOT323
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Output Current-Max 0.25 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.2 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 1 29
Rohs Code Yes
Breakdown Voltage-Min 75 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 0.5 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 2.5 µA
Reverse Test Voltage 75 V

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