BAS16E6327XT vs BAV10136 feature comparison

BAS16E6327XT Infineon Technologies AG

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BAV10136 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description R-PDSO-G3 O-LALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 O-LALF-W2
JESD-609 Code e3
Number of Elements 1 1
Number of Phases 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 200 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Power Dissipation-Max 0.37 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 80 V 60 V
Reverse Recovery Time-Max 0.006 µs 0.006 µs
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 1
HTS Code 8541.10.00.70
Case Connection ISOLATED
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code DO-35
Non-rep Pk Forward Current-Max 9 A
Output Current-Max 0.3 A
Reverse Current-Max 0.1 µA

Compare BAS16E6327XT with alternatives

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