BAS16
vs
BAS16LT1G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
ONSEMI
|
| Package Description |
R-PDSO-G3
|
TO-236, 3 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1.3 V
|
| JEDEC-95 Code |
TO-236AB
|
TO-236AB
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
2 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.35 W
|
0.225 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
75 V
|
100 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.006 µs
|
0.006 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
62
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-23 (TO-236) 3 LEAD
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
318-08
|
| Factory Lead Time |
|
63 Weeks, 4 Days
|
| Date Of Intro |
|
1999-01-01
|
| Samacsys Manufacturer |
|
onsemi
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare BAS16 with alternatives
Compare BAS16LT1G with alternatives