BAS116-7-F vs BAS116 feature comparison

BAS116-7-F Diodes Incorporated

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BAS116 Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIODES INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Min -65 °C
Output Current-Max 0.215 A 0.215 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Recovery Time-Max 3 µs 3 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 24
Part Package Code SOT-23
Package Description SOT-23, 3 PIN
Breakdown Voltage-Min 85 V
Operating Temperature-Max 150 °C
Reverse Current-Max 0.005 µA
Reverse Test Voltage 75 V

Compare BAS116-7-F with alternatives

Compare BAS116 with alternatives