BAS116 vs BAS1602VE6327XTSA1 feature comparison

BAS116 Galaxy Microelectronics

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BAS1602VE6327XTSA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD INFINEON TECHNOLOGIES AG
Part Package Code SOT-23
Package Description SOT-23, 3 PIN R-PDSO-F2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT
Application GENERAL PURPOSE
Breakdown Voltage-Min 85 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-F2
Non-rep Pk Forward Current-Max 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.215 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.25 W 0.25 W
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Current-Max 0.005 µA
Reverse Recovery Time-Max 3 µs 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 24 1
Reference Standard AEC-Q101

Compare BAS116 with alternatives

Compare BAS1602VE6327XTSA1 with alternatives