BAS116,235 vs BAS116-13 feature comparison

BAS116,235 NXP Semiconductors

Buy Now Datasheet

BAS116-13 Diodes Incorporated

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Output Current-Max 0.215 A 0.215 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Recovery Time-Max 3 µs 3 µs
Surface Mount YES YES
Terminal Finish TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Pbfree Code No
Application GENERAL PURPOSE
Operating Temperature-Min -65 °C

Compare BAS116,235 with alternatives

Compare BAS116-13 with alternatives