BAP65-02,135
vs
MA4P789-1141
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
M/A-COM TECHNOLOGY SOLUTIONS INC
Part Package Code
SOD
Pin Count
2
2
Manufacturer Package Code
SOD523
CASE 1141
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00
8541.10.00.80
Factory Lead Time
13 Weeks
Samacsys Manufacturer
NXP
Breakdown Voltage-Min
30 V
50 V
Configuration
SINGLE
SINGLE
Diode Capacitance-Max
0.9 pF
0.35 pF
Diode Capacitance-Nom
0.65 pF
Diode Forward Resistance-Max
0.9 Ω
1.5 Ω
Diode Res Test Current
5 mA
Diode Res Test Frequency
100 MHz
Diode Type
PIN DIODE
PIN DIODE
JESD-609 Code
e3
Minority Carrier Lifetime-Nom
0.17 µs
0.2 µs
Moisture Sensitivity Level
1
Number of Elements
1
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
260
Reverse Test Voltage
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
2
Package Description
R-PDSO-G2
Additional Feature
LOW DISTORTION
Application
ATTENUATOR; SWITCHING
Diode Element Material
SILICON
Frequency Band
S BAND
JESD-30 Code
R-PDSO-G2
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Power Dissipation-Max
0.15 W
Qualification Status
Not Qualified
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Form
GULL WING
Terminal Position
DUAL
Compare BAP65-02,135 with alternatives
Compare MA4P789-1141 with alternatives