BAL99-T vs BAL99-V-GS18 feature comparison

BAL99-T NXP Semiconductors

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BAL99-V-GS18 Vishay Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS VISHAY SEMICONDUCTORS
Part Package Code SOT-23
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 0.715 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 4.5 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.215 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.25 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 70 V 70 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.004 µs 0.006 µs
Surface Mount YES YES
Terminal Finish Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 2
Application GENERAL PURPOSE
Moisture Sensitivity Level 1

Compare BAL99-T with alternatives

Compare BAL99-V-GS18 with alternatives