BA159GA1G
vs
1N4007
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SUSSEX SEMICONDUCTOR INC
Package Description
DO-41, 2 PIN
DIE-1
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.40
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1.2 V
JEDEC-95 Code
DO-204AL
JESD-30 Code
O-PALF-W2
S-XUUC-N1
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
30 A
40 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
SQUARE
Package Style
LONG FORM
UNCASED CHIP
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Recovery Time-Max
0.25 µs
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Terminal Form
WIRE
NO LEAD
Terminal Position
AXIAL
UPPER
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
123
Reverse Current-Max
5 µA
Reverse Test Voltage
1000 V
Compare BA159GA1G with alternatives
Compare 1N4007 with alternatives