AZ23C3V6W vs AZ23C3V6RF feature comparison

AZ23C3V6W Galaxy Microelectronics

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AZ23C3V6RF Taiwan Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 95 Ω
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Knee Impedance-Max 600 Ω
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.2 W 0.3 W
Reference Voltage-Nom 3.6 V 3.6 V
Reverse Current-Max 15 µA
Reverse Test Voltage 1 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Voltage Temp Coeff-Max -1.98 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 2 1
Rohs Code Yes
Package Description R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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