AWB512ES4(LOW-VOLT)
vs
8R004SRV1302I15
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEIKO EPSON CORP
WHITE ELECTRONIC DESIGNS CORP
Package Description
,
CARD-68
Reach Compliance Code
unknown
unknown
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
200 ns
150 ns
Additional Feature
2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
JESD-30 Code
X-XXMA-X68
X-XXMA-X68
Memory Density
4194304 bit
4194304 bit
Memory IC Type
SRAM CARD
SRAM CARD
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
Number of Terminals
68
68
Number of Words
262144 words
262144 words
Number of Words Code
256000
256000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
60 °C
85 °C
Operating Temperature-Min
-40 °C
Organization
256KX16
256KX16
Output Characteristics
3-STATE
Output Enable
YES
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
UNSPECIFIED
UNSPECIFIED
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Voltage-Min
2.5 V
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
INDUSTRIAL
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UNSPECIFIED
UNSPECIFIED
Base Number Matches
1
1
Rohs Code
Alternate Memory Width
8
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare AWB512ES4(LOW-VOLT) with alternatives
Compare 8R004SRV1302I15 with alternatives