AWB512ES2{LOW-VOLT}
vs
SM9SSR512KP325
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEIKO EPSON CORP
SMART MODULAR TECHNOLOGIES
Package Description
,
Reach Compliance Code
unknown
unknown
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
200 ns
250 ns
Additional Feature
2K X 8 EEPROM ATTRIBUTE MEMORY; 2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
JESD-30 Code
X-XXMA-X68
X-XXMA-X68
Memory Density
4194304 bit
4194304 bit
Memory IC Type
SRAM CARD
SRAM CARD
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
68
68
Number of Words
262144 words
262144 words
Number of Words Code
256000
256000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
60 °C
55 °C
Operating Temperature-Min
Organization
256KX16
256K16
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
UNSPECIFIED
UNSPECIFIED
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Voltage-Min
2.5 V
Supply Voltage-Max (Vsup)
5.5 V
5.25 V
Supply Voltage-Min (Vsup)
3 V
4.75 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UNSPECIFIED
UNSPECIFIED
Base Number Matches
2
1
Alternate Memory Width
8
Compare AWB512ES2{LOW-VOLT} with alternatives
Compare SM9SSR512KP325 with alternatives