AWB512ES2{LOW-VOLT}
vs
AWB513ES2
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SEIKO EPSON CORP
|
SEIKO EPSON CORP
|
Package Description |
,
|
,
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
200 ns
|
200 ns
|
Additional Feature |
2K X 8 EEPROM ATTRIBUTE MEMORY; 2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
|
2K X 8 EEPROM ATTRIBUTE MEMORY; 2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
|
JESD-30 Code |
X-XXMA-X68
|
X-XXMA-X68
|
Memory Density |
4194304 bit
|
4194304 bit
|
Memory IC Type |
SRAM CARD
|
SRAM CARD
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
68
|
68
|
Number of Words |
262144 words
|
262144 words
|
Number of Words Code |
256000
|
256000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
60 °C
|
60 °C
|
Operating Temperature-Min |
|
|
Organization |
256KX16
|
256KX16
|
Output Characteristics |
3-STATE
|
3-STATE
|
Output Enable |
YES
|
YES
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
UNSPECIFIED
|
UNSPECIFIED
|
Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Standby Voltage-Min |
2.5 V
|
2.5 V
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
3 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UNSPECIFIED
|
UNSPECIFIED
|
Base Number Matches |
2
|
1
|
|
|
|
Compare AWB512ES2{LOW-VOLT} with alternatives
Compare AWB513ES2 with alternatives