AUIRLR3110ZTRL
vs
NVB6413ANT4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
ONSEMI
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
12 Weeks
4 Weeks
Samacsys Manufacturer
Infineon
onsemi
Additional Feature
ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
110 mJ
200 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
42 A
42 A
Drain-source On Resistance-Max
0.014 Ω
0.028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
140 W
136 W
Pulsed Drain Current-Max (IDM)
250 A
178 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Part Package Code
D2PAK 2 LEAD
Package Description
D2PAK-3/2
Pin Count
3
Manufacturer Package Code
418B-04
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare AUIRLR3110ZTRL with alternatives
Compare NVB6413ANT4G with alternatives