AUIRLR2908TRL vs IRLR2908PBF feature comparison

AUIRLR2908TRL Infineon Technologies AG

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IRLR2908PBF Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 30 A 30 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Operating Temperature-Max 175 °C 175 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 120 W 120 W
Surface Mount YES YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 80 V
Drain-source On Resistance-Max 0.028 Ω
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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