AT45DB641E-MHN2B-T vs AT45DB641E-MHN-Y feature comparison

AT45DB641E-MHN2B-T Dialog Semiconductor GmbH

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AT45DB641E-MHN-Y Dialog Semiconductor GmbH

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer DIALOG SEMICONDUCTOR GMBH DIALOG SEMICONDUCTOR GMBH
Reach Compliance Code compliant compliant
Clock Frequency-Max (fCLK) 85 MHz 85 MHz
JESD-30 Code R-PDSO-N8 R-PDSO-N8
JESD-609 Code e4 e4
Length 6 mm 6 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type FLASH FLASH
Memory Width 1 1
Moisture Sensitivity Level 1 1
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64MX1 64MX1
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code HVSON HVSON
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL SERIAL
Programming Voltage 1.8 V 1.8 V
Seated Height-Max 0.6 mm 0.6 mm
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 2.3 V 2.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Type NOR TYPE
Width 5 mm 5 mm
Base Number Matches 3 3