AS7C316096B-10BIN
vs
IS61WV20488FBLL-10B2I
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ALLIANCE MEMORY INC
|
INTEGRATED SILICON SOLUTION INC
|
Package Description |
LFBGA,
|
TFBGA,
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Factory Lead Time |
20 Weeks
|
|
Samacsys Manufacturer |
Alliance Memory
|
|
Access Time-Max |
10 ns
|
10 ns
|
JESD-30 Code |
R-PBGA-B48
|
R-PBGA-B48
|
Length |
8 mm
|
8 mm
|
Memory Density |
16777216 bit
|
16777216 bit
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
8
|
8
|
Moisture Sensitivity Level |
4
|
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
2097152 words
|
2097152 words
|
Number of Words Code |
2000000
|
2000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
2MX8
|
2MX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Seated Height-Max |
1.4 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.4 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.75 mm
|
0.75 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
6 mm
|
6 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare AS7C316096B-10BIN with alternatives
Compare IS61WV20488FBLL-10B2I with alternatives