AS5C512K8ECJ-55/H
vs
WMS512K8-55DJMA
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
WHITE MICROELECTRONICS
|
| Package Description |
SOJ,
|
CERAMIC, SOJ-36
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
55 ns
|
55 ns
|
| JESD-30 Code |
R-CDSO-J36
|
R-CDSO-J36
|
| Length |
23.4823 mm
|
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
36
|
36
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
512KX8
|
512KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
SOJ
|
SOJ
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Screening Level |
MIL-STD-883
|
|
| Seated Height-Max |
4.064 mm
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
J BEND
|
J BEND
|
| Terminal Pitch |
1.27 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
11.3538 mm
|
|
| Base Number Matches |
1
|
4
|
| Additional Feature |
|
BATTERY BACKUP
|
| Qualification Status |
|
Not Qualified
|
| Temperature Grade |
|
MILITARY
|
|
|
|
Compare AS5C512K8ECJ-55/H with alternatives