AS58C1001FS-25M vs WME128K8-250CQE feature comparison

AS58C1001FS-25M Micross Components

Buy Now Datasheet

WME128K8-250CQE Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer AUSTIN SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code DFP DIP
Package Description DFP, DIP,
Pin Count 32 32
Reach Compliance Code unknown compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 250 ns 250 ns
JESD-30 Code R-CDFP-F32 R-CDIP-T32
Length 20.955 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 128KX8 128KX8
Output Characteristics 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DFP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style FLATPACK IN-LINE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 2.8956 mm 5.13 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Form FLAT THROUGH-HOLE
Terminal Pitch 1.27 mm 2.5 mm
Terminal Position DUAL DUAL
Width 11.43 mm
Base Number Matches 1 2
Pbfree Code No
Rohs Code No
Additional Feature WRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
Data Retention Time-Min 10
Endurance 10000 Write/Erase Cycles
JESD-609 Code e4
Terminal Finish GOLD

Compare AS58C1001FS-25M with alternatives

Compare WME128K8-250CQE with alternatives