AS4C32M16D1-5BCN
vs
V58C2512164SFLJ6
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ALLIANCE MEMORY INC
|
PROMOS TECHNOLOGIES INC
|
| Package Description |
TFBGA-60
|
TBGA,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Factory Lead Time |
8 Weeks
|
|
| Samacsys Manufacturer |
Alliance Memory
|
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.7 ns
|
0.7 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH; TERM PITCH-MAX
|
| JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
| Length |
13 mm
|
12 mm
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
DDR1 DRAM
|
DDR1 DRAM
|
| Memory Width |
16
|
16
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
60
|
60
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
32MX16
|
32MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
TBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY, THIN PROFILE
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
8 mm
|
10 mm
|
| Base Number Matches |
2
|
2
|
| Terminal Pitch |
|
1 mm
|
|
|
|
Compare AS4C32M16D1-5BCN with alternatives
Compare V58C2512164SFLJ6 with alternatives