AS4C1G8D3LA-10BANTR
vs
AS4C1G8D3LA-10BIN
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ALLIANCE MEMORY INC
|
ALLIANCE MEMORY INC
|
Package Description |
TFBGA,
|
FBGA-78
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.36
|
8542.32.00.36
|
Date Of Intro |
2019-03-07
|
2019-03-07
|
Access Mode |
MULTI BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-PBGA-B78
|
R-PBGA-B78
|
Length |
10.6 mm
|
10.6 mm
|
Memory Density |
8589934592 bit
|
8589934592 bit
|
Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
Memory Width |
8
|
8
|
Moisture Sensitivity Level |
3
|
3
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
78
|
78
|
Number of Words |
1073741824 words
|
1073741824 words
|
Number of Words Code |
1000000000
|
1000000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
105 °C
|
95 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
1GX8
|
1GX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
1.45 V
|
1.45 V
|
Supply Voltage-Min (Vsup) |
1.283 V
|
1.283 V
|
Supply Voltage-Nom (Vsup) |
1.35 V
|
1.35 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
9 mm
|
9 mm
|
Base Number Matches |
1
|
2
|
Factory Lead Time |
|
8 Weeks
|
Samacsys Manufacturer |
|
Alliance Memory
|
|
|
|
Compare AS4C1G8D3LA-10BANTR with alternatives
Compare AS4C1G8D3LA-10BIN with alternatives