AS4C16M16S-6TAN vs K4S561632H-UP750 feature comparison

AS4C16M16S-6TAN Alliance Memory Inc

Buy Now Datasheet

K4S561632H-UP750 Samsung Semiconductor

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ALLIANCE MEMORY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2 TSOP
Package Description TSOP2, TSOP2,
Pin Count 54 54
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54 R-PDSO-G54
JESD-609 Code e3/e6
Length 22.22 mm 22.22 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 16MX16 16MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish PURE MATTE TIN/TIN BISMUTH
Terminal Form GULL WING GULL WING
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Width 10.16 mm 10.16 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Qualification Status Not Qualified
Temperature Grade INDUSTRIAL

Compare AS4C16M16S-6TAN with alternatives

Compare K4S561632H-UP750 with alternatives