AR35GB0
vs
ARS35GB0G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
O-PEDB-N2
|
O-PEDB-N2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| JESD-30 Code |
O-PEDB-N2
|
O-PEDB-N2
|
| JESD-609 Code |
e3
|
e3
|
| Non-rep Pk Forward Current-Max |
500 A
|
500 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-50 °C
|
-50 °C
|
| Output Current-Max |
35 A
|
35 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
DISK BUTTON
|
DISK BUTTON
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Current-Max |
5 µA
|
5 µA
|
| Reverse Recovery Time-Max |
3 µs
|
3 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare AR35GB0 with alternatives
Compare ARS35GB0G with alternatives