APTM50DAM17G
vs
APTM50DAM17G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Part Package Code
MODULE
Package Description
MODULE-5
MODULE-5
Pin Count
5
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3000 mJ
3000 mJ
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
180 A
180 A
Drain-source On Resistance-Max
0.017 Ω
0.017 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XUFM-X5
R-XUFM-X5
JESD-609 Code
e1
e1
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
5
5
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
720 A
720 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
TIN SILVER COPPER
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UPPER
UPPER
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
25 Weeks
Compare APTM50DAM17G with alternatives
Compare APTM50DAM17G with alternatives