APTM100DA18T1G
vs
APTM100DA18T
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Package Description |
ROHS COMPLIANT, SP1, 12 PIN
|
MODULE-12
|
Pin Count |
12
|
12
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
|
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
|
DS Breakdown Voltage-Min |
1000 V
|
1000 V
|
Drain Current-Max (ID) |
40 A
|
43 A
|
Drain-source On Resistance-Max |
0.216 Ω
|
0.215 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XUFM-X12
|
R-XUFM-X12
|
JESD-609 Code |
e1
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
12
|
12
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
657 W
|
780 W
|
Pulsed Drain Current-Max (IDM) |
260 A
|
172 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN SILVER COPPER
|
TIN LEAD
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Pbfree Code |
|
No
|
Part Package Code |
|
MODULE
|
Avalanche Energy Rating (Eas) |
|
3000 mJ
|
|
|
|