APTM100DA18T1G vs APTM100DA18T feature comparison

APTM100DA18T1G Microsemi Corporation

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APTM100DA18T Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description ROHS COMPLIANT, SP1, 12 PIN MODULE-12
Pin Count 12 12
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR SINGLE WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 1000 V 1000 V
Drain Current-Max (ID) 40 A 43 A
Drain-source On Resistance-Max 0.216 Ω 0.215 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X12 R-XUFM-X12
JESD-609 Code e1 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 12 12
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 657 W 780 W
Pulsed Drain Current-Max (IDM) 260 A 172 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN SILVER COPPER TIN LEAD
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Pbfree Code No
Part Package Code MODULE
Avalanche Energy Rating (Eas) 3000 mJ