APT94N60L2C3E3
vs
APT94N65B2C3
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
TMAX-3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED, ULTRA-LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
1800 mJ
|
1800 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
650 V
|
Drain Current-Max (ID) |
94 A
|
94 A
|
Drain-source On Resistance-Max |
0.035 Ω
|
0.035 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-264AA
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
282 A
|
282 A
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
No
|
Pin Count |
|
3
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
415 W
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare APT94N60L2C3E3 with alternatives
Compare APT94N65B2C3 with alternatives