APT8020B2FLLG
vs
APT6017JFLL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Package Description
B2, T-MAX-3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
32 Weeks
32 Weeks
Avalanche Energy Rating (Eas)
3000 mJ
1600 mJ
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
600 V
Drain Current-Max (ID)
38 A
31 A
Drain-source On Resistance-Max
0.22 Ω
0.17 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PUFM-X4
JESD-609 Code
e1
e1
Number of Elements
1
1
Number of Terminals
3
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
152 A
124 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
UNSPECIFIED
Terminal Position
SINGLE
UPPER
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
Power Dissipation-Max (Abs)
375 W
Reference Standard
UL RECOGNIZED
Compare APT8020B2FLLG with alternatives
Compare APT6017JFLL with alternatives