APT75F50B2
vs
IXFX78N50P3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
IXYS CORP
|
Package Description |
ROHS COMPLIANT, T-MAX, 3 PIN
|
PLASTIC, PLUS247, 3 PIN
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
32 Weeks
|
|
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
1580 mJ
|
1500 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
75 A
|
78 A
|
Drain-source On Resistance-Max |
0.075 Ω
|
0.068 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247AB
|
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1040 W
|
1130 W
|
Pulsed Drain Current-Max (IDM) |
230 A
|
200 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Pin Count |
|
3
|
|
|
|
Compare APT75F50B2 with alternatives
Compare IXFX78N50P3 with alternatives