APT6033BNR vs BUK542-60B feature comparison

APT6033BNR Advanced Power Technology

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BUK542-60B NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1300 mJ 30 mJ
Case Connection DRAIN ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 60 V
Drain Current-Max (ID) 22 A 8.4 A
Drain-source On Resistance-Max 0.33 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 285 pF 100 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 360 W 22 W
Power Dissipation-Max (Abs) 310 W 60 W
Pulsed Drain Current-Max (IDM) 88 A 33 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 300 ns 140 ns
Turn-on Time-Max (ton) 100 ns 98 ns
Base Number Matches 2 3
Transistor Application SWITCHING

Compare APT6033BNR with alternatives

Compare BUK542-60B with alternatives