APT6025SVRG
vs
IXFH26N60P
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
IXYS CORP
Package Description
D3PAK-3
TO-247, 3 PIN
Pin Count
3
3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
1300 mJ
1200 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
25 A
26 A
Drain-source On Resistance-Max
0.25 Ω
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
100 A
65 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
PURE MATTE TIN
MATTE TIN
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Part Package Code
TO-247AD
Additional Feature
AVALANCHE RATED
JEDEC-95 Code
TO-247AD
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Compare APT6025SVRG with alternatives
Compare IXFH26N60P with alternatives