APT56F50L
vs
APT6017B2LLG
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
32 Weeks
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1200 mJ
1600 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
600 V
Drain Current-Max (ID)
56 A
35 A
Drain-source On Resistance-Max
0.1 Ω
0.17 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-264AA
JESD-30 Code
R-PSFM-T3
R-PSIP-T3
JESD-609 Code
e3
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
175 A
140 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Package Description
TMAX-3
Pin Count
3
Case Connection
DRAIN
Compare APT56F50L with alternatives
Compare APT6017B2LLG with alternatives