APT5015BVRG
vs
IXFQ26N50Q
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
IXYS CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
1300 mJ
1500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
32 A
26 A
Drain-source On Resistance-Max
0.15 Ω
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
128 A
104 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
PURE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Part Package Code
TO-3P
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Additional Feature
AVALANCHE RATED
Compare APT5015BVRG with alternatives
Compare IXFQ26N50Q with alternatives