APT36GA60BD15 vs AIKW40N65DH5XKSA1 feature comparison

APT36GA60BD15 Microchip Technology Inc

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AIKW40N65DH5XKSA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 26 Weeks 26 Weeks
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 65 A 40 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6 V 5.7 V
Gate-Emitter Voltage-Max 30 V 20 V
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 290 W 166 W
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 262 ns 299 ns
Turn-on Time-Nom (ton) 29 ns 36 ns
Base Number Matches 2 1
Package Description ,
Samacsys Manufacturer Infineon
JESD-609 Code e3
Operating Temperature-Min -40 °C
Reference Standard AEC-Q101
Terminal Finish Tin (Sn)
VCEsat-Max 2.05 V

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Compare AIKW40N65DH5XKSA1 with alternatives