APT36GA60BD15
vs
AIKW40N65DH5XKSA1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
26 Weeks
|
26 Weeks
|
| Additional Feature |
LOW CONDUCTION LOSS
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
65 A
|
40 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| Gate-Emitter Thr Voltage-Max |
6 V
|
5.7 V
|
| Gate-Emitter Voltage-Max |
30 V
|
20 V
|
| JEDEC-95 Code |
TO-247
|
TO-247
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
290 W
|
166 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
262 ns
|
299 ns
|
| Turn-on Time-Nom (ton) |
29 ns
|
36 ns
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
,
|
| Samacsys Manufacturer |
|
Infineon
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Min |
|
-40 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| VCEsat-Max |
|
2.05 V
|
|
|
|
Compare APT36GA60BD15 with alternatives
Compare AIKW40N65DH5XKSA1 with alternatives