APT30N60BC6
vs
IPB60R125C6ATMA1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
26 Weeks
16 Weeks, 4 Days
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
636 mJ
636 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.125 Ω
0.125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e1
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
219 W
Pulsed Drain Current-Max (IDM)
89 A
89 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN SILVER COPPER
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Samacsys Manufacturer
Infineon
Moisture Sensitivity Level
1
Compare APT30N60BC6 with alternatives
Compare IPB60R125C6ATMA1 with alternatives