APT20N60SC3G
vs
STB26NM60NTRL
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
STMICROELECTRONICS
Package Description
D3PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas)
690 mJ
610 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
20.7 A
20 A
Drain-source On Resistance-Max
0.19 Ω
0.165 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
62 A
80 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
PURE MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
D2PAK
JEDEC-95 Code
TO-263AB
Compare APT20N60SC3G with alternatives
Compare STB26NM60NTRL with alternatives