APT20M38BVRG
vs
SML20M38SVR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TT ELECTRONICS PLC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
HIGH VOLTAGE
Avalanche Energy Rating (Eas)
1300 mJ
1300 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
67 A
67 A
Drain-source On Resistance-Max
0.038 Ω
0.038 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e1
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
268 A
268 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Package Description
SMALL OUTLINE, R-PSSO-G2
Compare APT20M38BVRG with alternatives
Compare SML20M38SVR with alternatives