APT1002RBN vs PHX15N06E feature comparison

APT1002RBN Advanced Power Technology

Buy Now Datasheet

PHX15N06E Philips Semiconductors

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC PHILIPS SEMICONDUCTORS
Package Description FLANGE MOUNT, R-PSFM-T3 ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 7 A 13 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 120 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 240 W
Power Dissipation-Max (Abs) 240 W 25 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 119 ns
Turn-on Time-Max (ton) 54 ns
Base Number Matches 2 2

Compare APT1002RBN with alternatives