APT10025PVR vs APT10026JNR feature comparison

APT10025PVR Advanced Power Technology

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APT10026JNR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-CDFM-D4 FLANGE MOUNT, R-PUFM-D2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3600 mJ 3600 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V 1000 V
Drain Current-Max (ID) 33 A 33 A
Drain-source On Resistance-Max 0.25 Ω 0.26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CDFM-D4 R-PUFM-D2
Number of Elements 1 1
Number of Terminals 4 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 625 W 690 W
Pulsed Drain Current-Max (IDM) 132 A 132 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form SOLDER LUG SOLDER LUG
Terminal Position DUAL UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Reference Standard UL RECOGNIZED

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