AP6679GJ-HF
vs
SUD50P04-13L-GE3
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
ADVANCED POWER ELECTRONICS CORP
|
VISHAY INTERTECHNOLOGY INC
|
| Part Package Code |
TO-251
|
|
| Package Description |
IN-LINE, R-PSIP-T3
|
HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
40 V
|
| Drain Current-Max (ID) |
75 A
|
50 A
|
| Drain-source On Resistance-Max |
0.009 Ω
|
0.013 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-251
|
TO-252
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
300 A
|
100 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Vishay
|
| Avalanche Energy Rating (Eas) |
|
80 mJ
|
| Case Connection |
|
DRAIN
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare AP6679GJ-HF with alternatives
Compare SUD50P04-13L-GE3 with alternatives