AP6679GJ-HF
vs
AP9575AGH-HF
feature comparison
Part Life Cycle Code |
Contact Manufacturer
|
Contact Manufacturer
|
Ihs Manufacturer |
ADVANCED POWER ELECTRONICS CORP
|
ADVANCED POWER ELECTRONICS CORP
|
Part Package Code |
TO-251
|
TO-252
|
Package Description |
IN-LINE, R-PSIP-T3
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
4
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
60 V
|
Drain Current-Max (ID) |
75 A
|
17 A
|
Drain-source On Resistance-Max |
0.009 Ω
|
0.064 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-251
|
TO-252
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
300 A
|
60 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Moisture Sensitivity Level |
|
1
|
Power Dissipation-Max (Abs) |
|
36 W
|
|
|
|
Compare AP6679GJ-HF with alternatives
Compare AP9575AGH-HF with alternatives