AP6618GM-HF
vs
NTMSD6N303R2G
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
ADVANCED POWER ELECTRONICS CORP
|
ONSEMI
|
| Part Package Code |
SOT
|
SOIC-8 Narrow Body
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SOIC-8
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
ULTRA-LOW RESISTANCE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
7 A
|
6 A
|
| Drain-source On Resistance-Max |
0.03 Ω
|
0.032 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
30 A
|
30 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Manufacturer Package Code |
|
751-07
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Avalanche Energy Rating (Eas) |
|
325 mJ
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
2 W
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare AP6618GM-HF with alternatives
Compare NTMSD6N303R2G with alternatives