AP50T10GP-HF
vs
IRF540Z
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Contact Manufacturer
|
Transferred
|
Ihs Manufacturer |
ADVANCED POWER ELECTRONICS CORP
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
TO-220AB
|
TO-220AB
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
38 A
|
36 A
|
Drain-source On Resistance-Max |
0.028 Ω
|
0.0265 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
225
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
120 A
|
140 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Avalanche Energy Rating (Eas) |
|
83 mJ
|
Case Connection |
|
DRAIN
|
JESD-609 Code |
|
e0
|
Power Dissipation-Max (Abs) |
|
91 W
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare AP50T10GP-HF with alternatives
Compare IRF540Z with alternatives