AP2322GN
vs
SI2302DS-T1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
ADVANCED POWER ELECTRONICS CORP
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
8.8
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2022-06-10
2015-06-15
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free
Conflict Mineral Status Source
CMRT V2.03a
CMRT V4.01b
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
2.5 A
2.8 A
Drain-source On Resistance-Max
0.09 Ω
0.085 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
SOT-23
kg CO2e/kg
8.8
Average Weight (mg)
11.25
CO2e (mg)
99
JEDEC-95 Code
TO-236
Compare AP2322GN with alternatives
Compare SI2302DS-T1 with alternatives