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AM99C165-55DCB vs CY8C166-55DMB feature comparison

AM99C165-55DCB AMD

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CY8C166-55DMB Cypress Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ADVANCED MICRO DEVICES INC CYPRESS SEMICONDUCTOR CORP
Package Description DIP, DIP24,.3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 55 ns
I/O Type COMMON COMMON
JESD-30 Code R-XDIP-T24 R-XDIP-T24
JESD-609 Code e0 e0
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 4 4
Number of Terminals 24 24
Number of Words 16384 words 16384 words
Number of Words Code 16000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 16KX4 16KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC CERAMIC
Package Code DIP DIP
Package Equivalence Code DIP24,.3 DIP24,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Standby Current-Max 0.015 A 0.001 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.11 mA 0.11 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Qualification Status Not Qualified
Screening Level 38535Q/M;38534H;883B
Memory » SRAMs
Memory » SRAMs

Compare AM99C165-55DCB with alternatives

Compare CY8C166-55DMB with alternatives