AM29F200BB-90DWI1
vs
AM29F200BB-90DGE1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
ADVANCED MICRO DEVICES INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
3A001.A.2.C
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
90 ns
90 ns
Alternate Memory Width
8
8
Boot Block
BOTTOM
Command User Interface
YES
Data Polling
YES
Endurance
1000000 Write/Erase Cycles
Memory Density
2097152 bit
2097152 bit
Memory IC Type
FLASH
FLASH
Memory Width
16
16
Number of Sectors/Size
1,2,1,3
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Temperature-Max
85 °C
125 °C
Operating Temperature-Min
-40 °C
-55 °C
Organization
128KX16
128KX16
Package Equivalence Code
DIE OR CHIP
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Ready/Busy
YES
Sector Size
16K,8K,32K,64K
Supply Voltage-Nom (Vsup)
5 V
5 V
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
MILITARY
Toggle Bit
YES
Type
NOR TYPE
Base Number Matches
3
3
Part Package Code
DIE
Package Description
DIE,
Pin Count
42
Additional Feature
MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION
Data Retention Time-Min
20
JESD-30 Code
R-XUUC-N42
Number of Functions
1
Number of Terminals
42
Operating Mode
ASYNCHRONOUS
Package Body Material
UNSPECIFIED
Package Code
DIE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP
Programming Voltage
5 V
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
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