AM29F010B-120FI vs KM29C010T-12 feature comparison

AM29F010B-120FI AMD

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KM29C010T-12 Samsung Semiconductor

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No No
Transferred Obsolete
ADVANCED MICRO DEVICES INC SAMSUNG SEMICONDUCTOR INC
TSOP TSOP1
TSOP1-R, TSSOP32,.8,20 TSOP1, TSSOP32,.8,20
32 32
unknown unknown
EAR99 EAR99
8542.32.00.51 8542.32.00.51
120 ns 120 ns
YES NO
YES YES
1000000 Write/Erase Cycles 100000 Write/Erase Cycles
R-PDSO-G32 R-PDSO-G32
e0 e0
18.4 mm 18.4 mm
1048576 bit 1048576 bit
FLASH FLASH
8 8
1 1
8
32 32
131072 words 131072 words
128000 128000
ASYNCHRONOUS ASYNCHRONOUS
85 °C 70 °C
-40 °C
128KX8 128KX8
PLASTIC/EPOXY PLASTIC/EPOXY
TSOP1-R TSOP1
TSSOP32,.8,20 TSSOP32,.8,20
RECTANGULAR RECTANGULAR
SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
PARALLEL PARALLEL
5 V 5 V
Not Qualified Not Qualified
YES
1.2 mm 1.2 mm
16K
0.000005 A 0.0001 A
0.04 mA 0.04 mA
5.5 V 5.5 V
4.5 V 4.5 V
5 V 5 V
YES YES
CMOS CMOS
INDUSTRIAL COMMERCIAL
TIN LEAD TIN LEAD
GULL WING GULL WING
0.5 mm 0.5 mm
DUAL DUAL
YES YES
NOR TYPE
8 mm 8 mm
2 1
No
AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS
10
3-STATE
128 words
10 ms

Compare AM29F010B-120FI with alternatives

Compare KM29C010T-12 with alternatives