AM2864ADEB
vs
DQ52B33H-250
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ADVANCED MICRO DEVICES INC
|
SEEQ TECHNOLOGY INC
|
| Part Package Code |
DIP
|
|
| Package Description |
DIP, DIP28,.6
|
DIP, DIP28,.6
|
| Pin Count |
28
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
250 ns
|
250 ns
|
| Command User Interface |
NO
|
NO
|
| Data Polling |
YES
|
NO
|
| JESD-30 Code |
R-CDIP-T28
|
R-GDIP-T28
|
| JESD-609 Code |
e0
|
e0
|
| Length |
35.56 mm
|
|
| Memory Density |
65536 bit
|
65536 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
8192 words
|
8192 words
|
| Number of Words Code |
8000
|
8000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
8KX8
|
8KX8
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP28,.6
|
DIP28,.6
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Page Size |
32 words
|
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
5 V
|
5 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
MIL-STD-883
|
|
| Seated Height-Max |
4.445 mm
|
|
| Supply Current-Max |
0.14 mA
|
0.11 mA
|
| Supply Voltage-Max (Vsup) |
5.25 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.75 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
NMOS
|
MOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Toggle Bit |
NO
|
NO
|
| Width |
15.24 mm
|
|
| Write Cycle Time-Max (tWC) |
10 ms
|
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
|
| Data Retention Time-Min |
|
10
|
| Standby Current-Max |
|
0.04 A
|
|
|
|
Compare AM2864ADEB with alternatives
Compare DQ52B33H-250 with alternatives