AIKW40N65DF5
vs
IKW40N65H5A
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
,
|
,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
COLLECTOR
|
|
Collector Current-Max (IC) |
74 A
|
|
Collector-Emitter Voltage-Max |
650 V
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
Gate-Emitter Thr Voltage-Max |
4.8 V
|
|
Gate-Emitter Voltage-Max |
20 V
|
|
JEDEC-95 Code |
TO-247
|
|
JESD-30 Code |
R-PSFM-T3
|
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-40 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
250 W
|
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
NO
|
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
THROUGH-HOLE
|
|
Terminal Position |
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
POWER CONTROL
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Nom (toff) |
200 ns
|
|
Turn-on Time-Nom (ton) |
30 ns
|
|
VCEsat-Max |
2.1 V
|
|
Base Number Matches |
2
|
2
|
|
|
|
Compare AIKW40N65DF5 with alternatives
Compare IKW40N65H5A with alternatives